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| Preliminary Data Sheet PD-20599 rev. B 11/98 HF50A060ACE Hexfred Die in Wafer Form 600 V Size 50 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.2V Max. 600V Min. 25A Max. Test Conditions TJ = 25C, IF = 10.0A TJ = 25C, IR = 200A TJ = 25C, VR = 600V Mechanical Data Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment Cr-Ni-Ag ( 1kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.257" x 0.257" 125mm, with std. < 100 > flat .015" .003" 01-5171 100 Microns 0.25mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : IRG4PSC71KD Die Outline NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ) 2. CONTROLLING DIMENSION : ( INCH ) 3. DIMENSIONAL TOLERANCES : BONDING PADS : < 0.635 TOLERANCE = 0.013 WIDTH < (.0250) TOLERANCE = (.0005) & > 0.635 TOLERANCE = 0.025 LENGTH > (.0250) TOLERANCE = (.0010) OVERALLDIE < 1.270 TOLRANCE = 0.102 WIDTH < (.050) TOLERANCE = (.004) & > 1.270 TOLERANCE = 0.203 LENGTH > (.050) TOLERANCE = (.008) |
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